HYPHEN - Hybrid Substrates for Competitive High Frequency Electronics (FP6-IST) (2005-10-01 - 2008-09-30) (»add to infobox)

Philippe BOVE, Enrico ZANONI, Sylvain DELAGE, Béla PECZ, Peder BERGMAN, Anna PIOTROWSKA, Jean-Claude DE JAEGER, Herve BLANCK, N. N.

PICOGIGA INTERNATIONAL (FR714 - Isère) (France), UNIVERSITY OF PADUA (ITD36 - Padova) (Italy), ALCATEL THALES III V LAB (FR104 - Essonne) (France), HUNGARIAN ACADEMY OF SCIENCES - RESERCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (HU101 - Budapest) (Hungary), NORSTEL AB (SE023 - Östergötlands län) (Sweden), INSTITUTE OF ELECTRON TECHNOLOGY (PL127 - Miasto Warszawa) (Poland), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) (FR101 - Paris) (France), UNITED MONOLITHICS SEMICONDUCTORS GMBH (DE - Germany) (Germany), UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I (FR301 - Nord) (France)

The radio-frequency devices have been so far built exclusively on bulk materials (GaAs, InP, SiC ). However, new applications are requesting higher performances (operating voltage, maximum power or operating temperature) from those devices and substrates materials appear to become one of the major limiting factors. GaN is foreseen as the material of choice for High Power Radio Frequency High Electron Mobility Transistor (HEMT). But single crystal GaN epitaxial layers can only be grown on SiC or GaN substrates (both being expensive and limited in size and quantity). More recently Sapphire and bulk Silicon have been used as substrates for GaN HEMT, but suffered from low thermal conductivity. The objective of this project is to prove the adequacy of a new type of composite substrate, able to provide a cost efficient solution that will leverage the use of advanced high power devices in wireless communication systems. The proposed innovative approach is based on thin single crystal "seed layer" transferred on top of a thick semi-insulating polycrystalline material tailored for thermal dissipation . This project aims to investigate and optimize two different substrates capable of supporting GaN HEMT devices : SiC on polycrystalline SiC : the high quality single crystal SiC acts as the seed layer, on top of an inexpensive high thermal conductivity layer, the polycrystalline SiC. This substrate will significantly improve the cost of GaN HEMT structure grown on it. Si on polycrystalline SiC : The silicon as seed layer will provide large diameter substrate for manufacturing of GaN HEMT (4 or 6 inches) and the polycrystalline SiC will significantly improve the thermal conductivity as opposed to bulk silicon. This can be dedicated to large volume applications. The Hyphen projects will develop and characterize the complete technology chain, from susbtrate to discrete devices.

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